Recently, the project "Development and Engineering Application of 6.5kV Silicon Carbide Devices and High Power Density Power Electronic Transformers," led by the State Grid Smart Grid Research Institute Co., Ltd., in collaboration with State Grid Hebei Electric Power Co., Ltd., North China Electric Power University, Tsinghua University, and other units, passed the technical appraisal by the China Electrotechnical Society. The appraisal committee recognized that the project's research achievements—China's first 6.5kV silicon carbide (SiC) devices and high power density power electronic transformers—have reached an international leading level and have broad prospects for promotion and application.
In recent years, high-voltage SiC devices have become a technological high ground fiercely contested by countries worldwide. However, constrained by technical challenges such as device material-chip-packaging and high-speed, high-reliability drive protection, 6.5kV SiC devices are still in the sample trial production stage.
The joint research team, composed of the State Grid Smart Grid Research Institute, State Grid Hebei Electric Power, and other units, has made breakthroughs in the full-chain core technology of "SiC device development-drive protection-equipment application." They have overcome the key technologies for the mass production of 6.5kV SiC devices, developed fully independent intellectual property SiC drive protection chips, and produced the world's first 35kV/5MW high-voltage SiC power device power electronic transformer. The chip and this power electronic transformer have been successfully applied to the Xiong'an Zero-Carbon Transportation Energy Internet Demonstration Project.
It is understood that the joint research team has obtained more than 40 national invention patents, published over 30 papers and 1 monograph, and released 1 international standard, 8 industry standards, and group standards. The related technological achievements can be applied in the fields of new energy and energy storage.
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